Semiconductor laser
文献类型：专利
| 作者 | OKUDA MASAHIRO |
| 发表日期 | 1989-06-14 |
| 专利号 | JP1989151284A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To maintain a low threshold current and to realize a high output power, by increasing a distance between an upper surface of a clad layer on a side of a ridge and that of an active layer near the end outputting a laser beam in comparison with the distance at the central region. CONSTITUTION:An active layer 2 is provided on an n-clad layer 1, and a p-clad layer 3 with a ridge 4 is provided thereon, and a distance X between an upper surface of the clad layer 3 on a side of the ridge 4 and that of the active layer 2 is made different according to the longitudinal direction of the ridge 4. Namely, the distance X of the central part is set to be the optimum value with respect to a threshold current, and the X is made larger only near the beam output terminal plane so that the output level of a terminal breakdown beam is high. A high output power and a low threshold current can be hence obtained at the same time. |
| 公开日期 | 1989-06-14 |
| 申请日期 | 1987-12-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | OKUDA MASAHIRO. Semiconductor laser. JP1989151284A. 1989-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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