Semiconductor laser device
文献类型：专利
| 作者 | OISHI AKIO; KAYANE NAOKI; TSUJI SHINJI; NAKAMURA MICHIHARU |
| 发表日期 | 1986-05-30 |
| 专利号 | JP1986112391A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make coupling of irregularities and electromagnetic waves large and to make the threshold value, at which laser oscillation is started, small, by forming the irregularities in the inside of a region wherein the electromagnetic waves are guided so that the irregularities are separated from an active region. CONSTITUTION:On an N type InP substrate, an N type InGaAsP layer 6, whose lattice alignment is achieved, is formed by a liquid phase epitaxial growing method. Thereafter, grating (periodic irregularities) having a period of 2,340Angstrom is formed on the surface by a well known interference exposing method. On this starting, an N type InGaAsP layer 7, an InGaAsP active layer 8, a P type InGaAsP anti-melt-back layer 9, a P type InP clad layer 4 and P type InGaAsP cap layer 5 are continuously grown by a continuous liquid phase epitaxial growing method. After the growing of the crystal layers, mesa etching is performed by using a stripe shape silicon oxide film. Then embedded growing is performed, a BH structure is formed and ohmic electrodes are formed on the substrate 1 and the layer 5. |
| 公开日期 | 1986-05-30 |
| 申请日期 | 1984-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76656]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OISHI AKIO,KAYANE NAOKI,TSUJI SHINJI,et al. Semiconductor laser device. JP1986112391A. 1986-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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