Semiconductor laser
文献类型：专利
| 作者 | YOSHIMURA RIE; OSHIMA MASAAKI |
| 发表日期 | 1989-06-22 |
| 专利号 | JP1989160075A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable an extremely improved single vertical mode laser to be easily obtained by mounting a waveguide path with a core and a clad consisting of two types of dielectrics on the inner reflection surface of inner-reflection interference type laser. CONSTITUTION:A p-InGaAsP8 is exposed in stripe shape by mounting a resist 9 on a p-InGaAsP8 of epitaxial wafer and by removing resist by approximately 6mum width in the direction which is at right angle to the channel direction of an active layer. Then, when the In-GaAsP layer and InP layer are removed, an n-InGaAsP5 is cut and a groove reaching an n-InP clad layer is formed. Then, an SiO2 10, a TiO2 11, and an SiO2 12 are deposited in the groove. An ohmic electrode is mounted to a p-InGaAsP8 and an n-InP substrate 1 of this wafer and cleavage is performed so that a waveguide path consisting of SiO2 and TiO2 is centered at the position of oscillator length L1+L2 200mum and L1-L2=70mum. When this laser is mounted to the stem and current is allowed to flow, an oscillation of approximately 25mA results, an optic output of 10mW or more results, or an extremely stable single vertical mode operation up to approximately four times larger than the threshold current Ith is achieved. |
| 公开日期 | 1989-06-22 |
| 申请日期 | 1987-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76666]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHIMURA RIE,OSHIMA MASAAKI. Semiconductor laser. JP1989160075A. 1989-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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