Semiconductor laser
文献类型：专利
| 作者 | SAKAMOTO MASAMICHI |
| 发表日期 | 1986-11-15 |
| 专利号 | JP1986258489A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the adsorption and/or transmission of water, oxygen or the like and to improve the adhering properties of a protecting film, by growing ZnSSe single crystals on the resonating faces of a semiconductor laser consisting of AlGaAs, InGaAlP and InGaAsP, for forming end-face protecting films. CONSTITUTION:An N-type GaAlAs layer 3 as first clad layer, an updoped GaAlAs layer 4 as active layer, a P-type GaAlAs layer 5 as second clad layer and a P-type GaAs layer 6 as cap layer are provided on a semi-insulating N type GaAs crystal substrate 2, sequentially in that order. An oxide film 7 is further provided thereon, and an opening is formed into a stripe shape. A metallic layer 8 to be an upper electrode and a metallic layer 1 to be a lower electrode are deposited on the whole surfaces. After that, the wafer is cleaved to obtain stripe-shaped substrates. Single crystal ZnSSe is grown on both the side faces of the substrate as end-face protecting films 9. According to this method, the end-face protecting films are enabled to have improved adhering properties, and hence the adsorption and/or transmission of water and oxygen, damages at the cleaved faces, corrosion and oxidation can be effectively prevented. |
| 公开日期 | 1986-11-15 |
| 申请日期 | 1985-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76669]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | SAKAMOTO MASAMICHI. Semiconductor laser. JP1986258489A. 1986-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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