Semiconductor laser device
文献类型：专利
| 作者 | NAGAI HIDEO; HIROSE MASANORI; KUME MASAHIRO; SHIMIZU YUICHI |
| 发表日期 | 1989-09-18 |
| 专利号 | JP1989232786A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make constriction of a current sufficiently so as to decrease an oscillation threshold current and an operating current by a method wherein an insulating film provided with a stripe-like opening is formed above an active layer, an electrode is provided on the opening, and a current constriction layer is provided under the active layer. CONSTITUTION:A block layer 2, a clad layer 3, an active layer 4, a clad layer 5, a contact layer 6, and an insulating layer 7 provided with a stripe-like opening are successively laminated on a substrate 1, and metal electrodes 8 and 9 are in ohmic contact with the contact layer 6 and the substrate 1 respectively. When a current is injected into a semiconductor laser device in a forward direction, a current constriction is performed between the ridges of the block layer 2 and from the upside and the underside of the stripe-like opening, so that a current is efficiently injected into the active layer 4 to start the laser oscillation. The oscillation threshold current and the operating current are small as compared with a conventional device, and a self-pulsation can be generated as the oscillation threshold current and the operating current are kept in a reduced state. |
| 公开日期 | 1989-09-18 |
| 申请日期 | 1988-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76685]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAGAI HIDEO,HIROSE MASANORI,KUME MASAHIRO,et al. Semiconductor laser device. JP1989232786A. 1989-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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