Light-emitting semiconductor device
文献类型：专利
| 作者 | SAWAI MASAAKI; UCHIDA HISATOSHI |
| 发表日期 | 1983-08-15 |
| 专利号 | JP1983137281A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting semiconductor device |
| 英文摘要 | PURPOSE:To prevent the generation of a void in a junction section by packing solder into the indentation section of the main surface of an electrode and previously flattening the main surface of the electrode. CONSTITUTION:An n type clad layer 2, an active layer 3, a p type clad layer 4, a p type blocking layer 5 and an n type buried layer 6 are formed onto a substrate 1 consisting of GaAs. The surface of the layer 6 is coated with an insulating film 7. A diffusion layer 8 in which Zn is diffused is formed to the surface layer section of the layer 4. The indentation 16 is formed to the main surface exposed of the anode electrode 10 because stepped difference is formed in an electrode forming surface to which the anode electrode 10 is shaped. Solder 17 buries the indentation 16, and makes the indentation the same level as the main surface of the electrode 10. An element 11 formed in this manner is fixed through the electrode 10 by using solder 20 attached previously to a sub-mount. |
| 公开日期 | 1983-08-15 |
| 申请日期 | 1982-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76697]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SAWAI MASAAKI,UCHIDA HISATOSHI. Light-emitting semiconductor device. JP1983137281A. 1983-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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