Semiconductor laser device
文献类型：专利
| 作者 | YAMAWAKI TAKESHI |
| 发表日期 | 1990-04-12 |
| 专利号 | JP1990100390A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce astigmatism by narrowing stripe groove width on a narrow ridge by forming a tapered section from a wide ridge. CONSTITUTION:When a stripe groove 5 is shaped to an N-GaAs block layer 2 formed onto a P-GaAs substrate 1, the tapered sections of stripe groove shapes 61, 62 are shaped onto narrow ridges. When a P-AlGaAs lower clad layer is grown onto the block layer 2 through a liquid growth method, melt-back is generated remarkably on the narrow ridges, the groove width of the stripe groove shapes 61, 62 on the narrow ridges is extended, and a stripe groove in width approximately uniform extending over the whole region of a stripe is acquired. Accordingly, astigmatism can be reduced. |
| 公开日期 | 1990-04-12 |
| 申请日期 | 1988-10-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76704]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAMAWAKI TAKESHI. Semiconductor laser device. JP1990100390A. 1990-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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