Semiconductor laser
文献类型：专利
| 作者 | UKO KATSUYUKI; SAKAI KAZUO; MATSUSHIMA YUICHI |
| 发表日期 | 1989-01-26 |
| 专利号 | JP1989024482A |
| 著作权人 | 国際電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To select only one resonant wavelength so as to make a laser operate in a narrow oscillating laser ray with a single wavelength by a method wherein a Mach-Zehnder interference type waveguide path is provided in a semiconductor laser resonator. CONSTITUTION:Carriers are injected into a light emitting region A which has an optical gain. A Mach-Zehnder interference type waveguide path region B is ramified into a waveguide path I(b1-b3-b5) and a waveguide path II(b2-b4-b6) which are different from each other in a refractive index, and similar to a structure of the Mach-Zehnder interferometer. A phase adjusting waveguide path region C performs the phase adjustment of the waveguide paths I and II simultaneously. The waveguide paths I and II of the region B are disposed on one extension of a waveguide path a which is optically connected with a light emitting layer 2 of the light emitting region A. Carriers injected into the region B or the voltage impressed on the region B is made to vary so as to change a wavelength path layer 3 in a refractive index. In addition, 5 and 6 are reflective end faces which constitute a laser resonator. |
| 公开日期 | 1989-01-26 |
| 申请日期 | 1987-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76708]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 国際電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | UKO KATSUYUKI,SAKAI KAZUO,MATSUSHIMA YUICHI. Semiconductor laser. JP1989024482A. 1989-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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