Semiconductor laser
文献类型：专利
| 作者 | ASANO, HIDEKI; WADA, MITSUGU; FUKUNAGA, TOSHIAKI |
| 发表日期 | 2001-09-04 |
| 专利号 | US6285695 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser includes a first clad layer having one of p-type conductivity and n-type conductivity, a first optical waveguide layer, a first barrier layer of GaAs1-y2Py2, a quantum-well active layer of Inx3Ga1-x3As1-y3Py3, a second barrier layer of GaAs1-y2Py2, a second optical waveguide layer and a second clad layer having the of p-type conductivity and n-type conductivity formed in this order on a GaAs substrate. Each of the first and second clad layers is of a composition which matches with the GaAs substrate in lattice. Each of the first and second optical waveguide layers is of a InGaAsP composition which matches with the GaAs substrate in lattice. Each of the first and second barrier layers is 10 to 30 nm in thickness and is of a composition which has tensile strain relative to the GaAs substrate, the product of the tensile strain and the thickness of each of the first and second barrier layers being 5 to 20% nm. The quantum-well active layer is 6 to 10 nm in thickness and is of a composition which has compressive strain of not smaller than 0% relative to the GaAs substrate. The sum of the product of the tensile strain and the thickness of the first barrier layer and that of the second barrier layer is larger than the product of the compressive strain and the thickness of the quantum-well active layer. |
| 公开日期 | 2001-09-04 |
| 申请日期 | 1999-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76712]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | ASANO, HIDEKI,WADA, MITSUGU,FUKUNAGA, TOSHIAKI. Semiconductor laser. US6285695. 2001-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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