Semiconductor laser device
文献类型：专利
| 作者 | NAKAMURA AKIRA; SUGINO TAKASHI; YOSHIKAWA AKIO; KUME MASAHIRO; HIROSE MASANORI; YAMAMOTO ATSUYA |
| 发表日期 | 1989-08-08 |
| 专利号 | JP1989196892A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To narrow the width of a current injection region, to lower a threshold current value and to stabilize laser oscillation by forming a projecting section in which the width of a lower section is made narrower than an upper section. CONSTITUTION:An N-type clad layer 3, an active layer 4, a P-type clad layer 5 and a P type cap layer 6 are grown successively onto the face (100) of an N-type GaAs substrate 2. A resist is shaped so that the striped direction is directed in , and etching is conducted by an etchant at the ratio of H2SO4:H2O2:H2O=1:8: Consequently, the side faces of a projecting section left under the resist are represented by a face (1-11) and a face (11-1), and the striped projecting section 5 in which a lower section is made narrower than an upper section is formed. An SiO2 layer 8 is shaped, the SiO2 layer on the layer 6 is removed, and electrodes 1, 7 are formed. Since the width of the lower section of the projecting section 5 is narrowed, current injection width can be narrowed. Sections except the cap layer 6 are coated with the SiO2 layer 8, thus also preventing leakage currents. |
| 公开日期 | 1989-08-08 |
| 申请日期 | 1988-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76719]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKAMURA AKIRA,SUGINO TAKASHI,YOSHIKAWA AKIO,et al. Semiconductor laser device. JP1989196892A. 1989-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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