Semiconductor laser device
文献类型：专利
| 作者 | SHIGIHARA KIMIO; AOYANAGI TOSHITAKA |
| 发表日期 | 1990-10-29 |
| 专利号 | JP1990264488A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable only a basic mode to be present always in an active region so as to enable laser rays projected from the rear face to be clear in FFP by a method wherein a radiation mode absorbing region is provided beside the active region of a flared type SBA laser device. CONSTITUTION:The distribution of an electric field of a basic mode has its peak at the center and decreases gradually approaching its skirts, and most of it localizes in an active region 12. On the other hand, that of a radiation mode behaves vibrationally even outside the active region 12 and has many peaks. When a radiation mode absorbing region 11 (refractive index n0) is provided outside the region 12 through the intermediary of a gap 5b (width S(Z), refractive index n2), the radiation mode which behaves vibrationally even outside the region 12 is substantially absorbed by the region 1 On the other hand, as a basic mode localizes in the active region 12, it is not much absorbed. Therefore, only a basic mode is present in a stripe, so that light rays projected from the rear side become clear in FEP. |
| 公开日期 | 1990-10-29 |
| 申请日期 | 1989-04-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76724]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SHIGIHARA KIMIO,AOYANAGI TOSHITAKA. Semiconductor laser device. JP1990264488A. 1990-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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