Semiconductor laser diode
文献类型：专利
| 作者 | UENISHI KATSUZOU; KASAMA YASUHIKO; MATOBA AKIHIRO |
| 发表日期 | 1983-08-18 |
| 专利号 | JP1983139483A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | PURPOSE:To obtain a diode having strength against disturbance of an external circuit and small threshold current by constructing a positive feedback loop of an annular resonator structure, and coupling a waveguide of equal or different width to or from the width of its waveguide through a gap as an output waveguide. CONSTITUTION:An output waveguide 12 is coupled on a linear line of an annular resonator 10, or coupled on a tangential line of the resonator 10. If the width of the output waveguide 12 is the same as that of a light waveguide of the resonator 10, the resonator 10 can be preferably coupled on a tangential line with large laser output. Even if the width of the waveguide 12 is varied, the resonator 10 can be variably coupled. In this structure, a gap DELTA (output coupler 11) for varying the coupling coefficient is provided between the resonator 10 and the waveguide 12, the both can be variably coupled by altering the gap DELTA. |
| 公开日期 | 1983-08-18 |
| 申请日期 | 1982-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76736]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | UENISHI KATSUZOU,KASAMA YASUHIKO,MATOBA AKIHIRO. Semiconductor laser diode. JP1983139483A. 1983-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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