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文献类型：专利
| 作者 | TOMITA KOJI; TAKAGI JUNKO; INOE TADAAKI |
| 发表日期 | 1984-03-09 |
| 专利号 | JP1984010597B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain the laser array having high S/N ratio by forming a plurality of semiconductor lasers formed with grooves on a substrate, and converting an optical path between the confronting resonant surfaces of the groove to irradiate active region of other resonant surface. CONSTITUTION:Etched grooves are formed on the same substrate to form respective semiconductor laser LD array. A signal 15 from a fiber 14 is incident through a lens 16 to an LD1 A tapered lens 18 is formed at the output terminal of the stripe 17 of the LD11 to introduce the light through the stripe 19 of the LD12. Aluminum 22 is evaporated on the surface of the lens to eliminate the incident laser light 21 to the LD11 from the incident end surface 20. A lens is also attached to the LD12. The light from the output end surface of the LD11 is irradiated in a direction of an angle delta determined by the tapered angle 24 of the lens and the refractive index n. The larger the delta is, the small the reverse coupling to obtain light amplification of high S/N ratio, but to lower the coupling degree of the forward signal between the LDs. Since the refractive index of the active layer 32 is large, it can select 2 deg.< delta<30 deg. The optimum groove width is 0.1-0.5 times of the stripe length of the laser. |
| 公开日期 | 1984-03-09 |
| 申请日期 | 1979-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76737]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | TOMITA KOJI,TAKAGI JUNKO,INOE TADAAKI. -. JP1984010597B2. 1984-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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