Manufacture of semiconductor laser
文献类型：专利
| 作者 | SEKI TETSUYA |
| 发表日期 | 1992-11-02 |
| 专利号 | JP1992311078A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable the removal of a II-VI compound semiconductor to be remarkably enhanced in uniformity so as to improve a semiconductor element in characteristics uniformity and manufacturing yield by a method wherein photoresist on a II-VI compound semiconductor is previously removed through an ashing process. CONSTITUTION:A rib is formed on a double hetero-junction. Through an epitaxial growth method, a single crystal ZnSe thin film 107 is formed on a P-type clad layer 104 and the side face of the rib, and a polycrystalline ZnSe thin film 108 is made to grow on an SiO mask 106. Resist is applied on all the surface of a substrate for the formation of a resist layer 109, whereby the surface of the wafer is nearly flattened. Then, the resist layer 109 is removed through ashing to make the polycrystalline ZnSe 108 on the rib exposed. The polycrystalline ZnSe 108 on the rib is etched through a reactive ion beam etching method. By this setup, a semiconductor laser excellent in reproducibility, reliability, and evenness can be obtained. |
| 公开日期 | 1992-11-02 |
| 申请日期 | 1991-04-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76743]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SEKI TETSUYA. Manufacture of semiconductor laser. JP1992311078A. 1992-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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