Semiconductor laser device
文献类型：专利
| 作者 | NISHIMOTO HIROYUKI |
| 发表日期 | 1990-01-23 |
| 专利号 | JP1990020085A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To remove parasitic capacitance in a semiconductor laser to the utmost by covering a part other than the vicinity of a light emitting region with a high resistance semiconductor layer. CONSTITUTION:An inverted mesa shaped protruding part A is formed on an N-InP substrate An N-InP buffer layer 2, an InGaAsP active layer 3 and a P-InP clad layer 4 are sequentially laminated at the protruding part A. A high resistance InP layer 6 is formed on the N-InP buffer layer 2 so as to cover the inverted mesa shaped protruding part A. The high resistance InP layer 6 is removed at the upper end part of the inverted mesa shaped protruding part. A P-InP embedded layer 7 is embedded in the upper end part. A P- InGaAsP cap layer 8 is laminated thereon. A P-side electrode 9 is formed on the cap layer 8. An N-side electrode 10 is formed on the lower surface of the N-InP substrate Since there is the high resistance semiconductor layer around the InGaAsP active layer 3 in this structure, almost the entire signal current which is injected from the P-side electrode 9 flows into the InGaAsP active layer 3. Therefore, the structure having the excellent high frequency response characteristic is obtained. |
| 公开日期 | 1990-01-23 |
| 申请日期 | 1988-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76745]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHIMOTO HIROYUKI. Semiconductor laser device. JP1990020085A. 1990-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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