Manufacture of semiconductor device
文献类型：专利
| 作者 | TOYODA YUKIO |
| 发表日期 | 1989-05-10 |
| 专利号 | JP1989117330A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To form a window hole in specified size by etching process by a method wherein an applicable opaque mask bonded onto a substrate can mask both an etchant and light. CONSTITUTION:A window hole is formed in a substrate by photoirradiating wet etching process with photo beams 10 using Ar laser and an etchant 9 as a light source. Next, a pore pattern in SiO2 diameter is formed on the growing surface side in alignment with this window hole and then a (p) electrode 11 is formed while the substrate side leaving an Au/AuGe film 7 on the surface is used as an (n) electrode. Through these procedures, the laser beam irradiation level (b) is controlled to make the window hole, i.e. after finishing the etching process, the laser beam irradiation is stopped to be satisfactorily controlled. |
| 公开日期 | 1989-05-10 |
| 申请日期 | 1987-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76755]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | TOYODA YUKIO. Manufacture of semiconductor device. JP1989117330A. 1989-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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