Semiconductor laser device
文献类型：专利
| 作者 | KAZUMURA MASARU; OOTA KAZUNARI; YOSHIKAWA AKIO |
| 发表日期 | 1985-10-05 |
| 专利号 | JP1985196990A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To constrict currents sufficiently by one-time growth, and to enable low threshold currents by dividing a surface-side clad layer having double hetero-structure formed on a substrate into two layers and penetrating one part of the upper layer of the clad layer by an impurity diffusion region in a striped manner. CONSTITUTION:Four layers are grown on the surface of a substrate 31 in succession. A first layer 32 represents a lower clad layer and a second layer 33 active layer, and an upper clad layer consists of a first clad layer 34 as a third layer and a second clad layer 35 as a fourth layer. An silicon nitride film is evaporated on the surface after growth. A diffusion region 36 composed of Zn is formed. The second clad layer 35 functions as a current constriction layer, and currents are injected to lower sections only from the Zn diffusion region 36. The first clad layer 34 is thin, currents do no extend so much from the stripe width of Zn diffusion and reach to the active layer 33, and loss currents are little. On the other hand, the P and N two layers 34, 35 in the upper clad layer optically constitute sufficiently thick clad layers, and low threshold operation is realized. |
| 公开日期 | 1985-10-05 |
| 申请日期 | 1984-03-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76767]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | KAZUMURA MASARU,OOTA KAZUNARI,YOSHIKAWA AKIO. Semiconductor laser device. JP1985196990A. 1985-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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