Semiconductor light emitting device
文献类型：专利
| 作者 | SUGAWARA, HIDETO; ISHIKAWA, MASAYUKI; KOKUBUN, YOSHIHIRO; NISHIKAWA, YUKIE; NARITSUKA, SHIGEYA; ITAYA, KAZUHIKO; HATAKOSHI, GENICHI; SUZUKI, MARIKO |
| 发表日期 | 1992-10-06 |
| 专利号 | US5153889 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5x1017 cm-3 to 5x1018 cm-3. |
| 公开日期 | 1992-10-06 |
| 申请日期 | 1991-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76772]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | SUGAWARA, HIDETO,ISHIKAWA, MASAYUKI,KOKUBUN, YOSHIHIRO,et al. Semiconductor light emitting device. US5153889. 1992-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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