Semiconductor laser device
文献类型：专利
| 作者 | NARUI HIRONOBU; HIRATA SHOJI |
| 发表日期 | 1992-11-13 |
| 专利号 | JP1992324988A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To solve a problem such as a leakage current in a semiconductor laser device of SDH structure so as to lessen the laser device concerned in threshold current. CONSTITUTION:A substrate 1 whose primary plane 1S is a {100} crystal plane is provided with a mesa protrusion 2 which extends in a crystal axial direction, and an AlGaAs layer 3 is provided onto the mesa protrusion 2. At least, an active layer 5, clad layers 5, 6, and 9, and a current blocking layer 8 are made to grow on the mesa protrusion 2 through a vapor growth method, the Al content of the AlGaAs layer 3 is set equal to or larger than those of the clad layers 4 and 6. |
| 公开日期 | 1992-11-13 |
| 申请日期 | 1991-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76776]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | NARUI HIRONOBU,HIRATA SHOJI. Semiconductor laser device. JP1992324988A. 1992-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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