Manufacture of semiconductor laser element
文献类型：专利
| 作者 | IRIKAWA MASANORI; KASHIWA TORU |
| 发表日期 | 1989-08-23 |
| 专利号 | JP1989209777A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent characteristic deterioration due to a buried boundary by forming a stripelike groove in a current blocking layer formed on a semiconductor substrate, and sequentially laminating, by an MOCVD method, a first conductivity clad layer, an active layer and a second conductivity type clad layer in the groove. CONSTITUTION:An n-type InP buffer layer 12, a GaInAsP etching stop layer 13, a p-type InP current blocking layer 14, an n-type InP current blocking layer 15 and a GaInAsP etching mask 16 are continuously grown on an n-type InP substrate 1 Then, the layers 15, 14 are vertically etched with an HCl series etchant. The etching is automatically stopped in a state that the layer 13 is presented. Thereafter, the layer 13 is again removed with a sulfuric acid series etchant. Then, an n-type InP clad layer 18, a GaInAsP active layer 19 and a p-type InP clad layer 20 are grown by an MOCVD method. Eventually, after an SiO2 etching mask 17 is removed, a p-type GaInAsP contact layer 21 is grown. |
| 公开日期 | 1989-08-23 |
| 申请日期 | 1988-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76788]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IRIKAWA MASANORI,KASHIWA TORU. Manufacture of semiconductor laser element. JP1989209777A. 1989-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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