Semiconductor light emitting device
文献类型：专利
| 作者 | USHIJIMA ICHIROU; TANAHASHI TOSHIYUKI; NAKAI SABUROU |
| 发表日期 | 1984-04-02 |
| 专利号 | JP1984056784A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve semiconductor luminous efficiency by reducing leakage current by a method wherein the carrier concentration of a clad layer is made equal to that of a semiconductor substrate or larger than it. CONSTITUTION:The device has the semiconductor substrate 11 composed of a compound semiconductor, a stripe form groove 19 formed on the surface of the substrate 11, and the clad layer 13 and an active layer 14 buried in the groove 19. Then, the carrier concentration of the layer 13 is made equal to that of the substrate 11 or larger than it. Thereby, the quantum efficiency of a semiconductor light emitting device buried in the substrate is largely improved. |
| 公开日期 | 1984-04-02 |
| 申请日期 | 1982-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76798]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | USHIJIMA ICHIROU,TANAHASHI TOSHIYUKI,NAKAI SABUROU. Semiconductor light emitting device. JP1984056784A. 1984-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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