Semiconductor laser array device
文献类型:专利
作者 | TAKESHIMA MASUMI |
发表日期 | 1987-02-24 |
专利号 | JP1987042590A |
著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser array device |
英文摘要 | PURPOSE:To obtain a laser array with a stable mode by a method wherein laser diodes which have stripe-shape electrodes whose widths vary periodically along the optical axes of laser cavities are arranged sufficiently close to each other. CONSTITUTION:An electrode 7 is mode to be positive against anelectrode 8. Wide parts of the stripe of a Zn diffused layer 1 are 20mum wide and 0.48mum long and narrow parts are 4mum wide and 0.48mum long and spacing between the narrow stripes is 1mum and the longitudinal direction of the stripe is the longitudinal direction of the cavities. By making the electrode 7 positive, positive holes are injected from the Zn diffused layer 1 into a GaAs activation layer 4 and the flow of the positive holes is constricted by an N-type GaAs layer 2 to realize laser operation directly below the layer The gain varies periodically along the direction of the cavities and the effective refractive index also varies with the same period. The period is 0.48mumX2 which is an integer (4) times of the wavelength of a laser light in a material. Therefore, oscillations of many vertical modes with the wavelength other than that wavelength in the material are intensely suppressed to stabilize the mode. Actually, two independent oscillations are generated in the narrow stripe parts and coupled optically so that a laser array with phase synchronism can be obtained. P-type and N-type GaAlAs cladding layers 3 and 5 reduce the operating current. |
公开日期 | 1987-02-24 |
申请日期 | 1985-08-20 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/76812] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | TAKESHIMA MASUMI. Semiconductor laser array device. JP1987042590A. 1987-02-24. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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