中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser array device

文献类型:专利

作者TAKESHIMA MASUMI
发表日期1987-02-24
专利号JP1987042590A
著作权人MATSUSHITA ELECTRIC IND CO LTD
国家日本
文献子类发明申请
其他题名Semiconductor laser array device
英文摘要PURPOSE:To obtain a laser array with a stable mode by a method wherein laser diodes which have stripe-shape electrodes whose widths vary periodically along the optical axes of laser cavities are arranged sufficiently close to each other. CONSTITUTION:An electrode 7 is mode to be positive against anelectrode 8. Wide parts of the stripe of a Zn diffused layer 1 are 20mum wide and 0.48mum long and narrow parts are 4mum wide and 0.48mum long and spacing between the narrow stripes is 1mum and the longitudinal direction of the stripe is the longitudinal direction of the cavities. By making the electrode 7 positive, positive holes are injected from the Zn diffused layer 1 into a GaAs activation layer 4 and the flow of the positive holes is constricted by an N-type GaAs layer 2 to realize laser operation directly below the layer The gain varies periodically along the direction of the cavities and the effective refractive index also varies with the same period. The period is 0.48mumX2 which is an integer (4) times of the wavelength of a laser light in a material. Therefore, oscillations of many vertical modes with the wavelength other than that wavelength in the material are intensely suppressed to stabilize the mode. Actually, two independent oscillations are generated in the narrow stripe parts and coupled optically so that a laser array with phase synchronism can be obtained. P-type and N-type GaAlAs cladding layers 3 and 5 reduce the operating current.
公开日期1987-02-24
申请日期1985-08-20
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/76812]  
专题半导体激光器专利数据库
作者单位MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式
GB/T 7714
TAKESHIMA MASUMI. Semiconductor laser array device. JP1987042590A. 1987-02-24.

入库方式: OAI收割

来源:西安光学精密机械研究所

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