Semiconductor laser array and manufacture thereof
文献类型：专利
| 作者 | YAMADA TOMOYUKI |
| 发表日期 | 1990-04-17 |
| 专利号 | JP1990103989A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser array having an inner current narrowing part by forming an N-type conductor region on a stripe shaped groove in one of semiconductor layers for upper and lower clad layers, and forming P-type conductor regions on both sides of the groove. CONSTITUTION:A P-type GaAs substrate is used for a compound semiconductor ground 3 The substrate has groove 33. The grooves have stripe shapes. The number of the grooves is equal to the number of the stripes. The grooves have steps where a part of an N-type semiconductor layer which is crystally grown on the substrate is changed into a P-conductor type by surface orientation dependence. A laminated body comprising a semiconductor layer 37 for a lower clad layer, a semiconductor layer 39 for an active layer and a semiconductor layer 41 for an upper clad layer is provided on the substrate 3 A region on the groove 33 in one layer of the layers 37 and 41 becomes an N-conductive type. Specified regions on both sides of the groove 33 become a P-conductive type. Said regions function as a narrowing part. In this way, a semiconductor laser array having an inner current narrowing part is obtained. |
| 公开日期 | 1990-04-17 |
| 申请日期 | 1988-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76814]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YAMADA TOMOYUKI. Semiconductor laser array and manufacture thereof. JP1990103989A. 1990-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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