Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | YAMAMOTO SABURO; SASAKI KAZUAKI; KONDO MASAKI; SUYAMA NAOHIRO; KONDO MASAFUMI |
| 发表日期 | 1991-01-11 |
| 专利号 | JP1991006083A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To accurately realize cleavage even with a shortened window region by providing a semiconductor region having a forbidden band width wider than active layers formed between opposite ends in the direction of lasing and opposite ends of the active layer, and recessed portions formed on both sides in a direction of elongation of the end surfaces of the semiconductor region. CONSTITUTION:A substrate 21 includes a current stop layer 22, a cladding layer 23, an active layer 24, a cladding layer 25, a capping layer 26, a window layer 27, and a contact layer 28, all laminated thereon. A recessed portion 20 is formed in the vicinity of the end surface 21a extending to the cladding layer 25 or onto the substrate 21, and a like recessed portion is formed also on the opposite end surface 21b to the end surface 21a. The high resistance window layer 27 is buried in the recessed portion 20, but the active layer 24 is not formed. And, a window region is formed by the window layer 27, and recessed portions 29 are formed in the recessed portion 20 on both sides of the same in the vicinity of the end surface 21a. The recessed portion 20 is formed at the portion where cleavage is caused, in such a manner. Cleavage can accurately be achieved even with the shortened window region. |
| 公开日期 | 1991-01-11 |
| 申请日期 | 1989-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76815]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,SASAKI KAZUAKI,KONDO MASAKI,et al. Semiconductor laser device and manufacture thereof. JP1991006083A. 1991-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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