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文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; KOBAYASHI KEISUKE; NAKAJIMA HISAO; SEMURA SHIGERU; UCHIDA YOKO; OOTA TSUNEAKI; KURODA TAKARO; NARISAWA TADASHI; YOKOZUKA TATSUO |
| 发表日期 | 1989-10-23 |
| 专利号 | JP1989049030B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To simplify the production process, make the contact of electrodes easy, and reduce the leak current, by forming a current constriction layer and a refraction index wave guide layer in the inside by Si implantation with high energy. CONSTITUTION:On the (001) face of the N-type GaAs substrate 1b, the following layers are laminated; the N-type GaAs buffer layer 2b, the N-type AlxGa1-xAs/ GaAsMQW buffer layer 3b, the N-type AlzGa1-zAs/AlwGa1-wAsMQW active layer 6, the P-type AlyGa1-yAs photo guide layer 7b, the P-type AlxGa1-xAs clad layer 8b and the cap layer 14. On the surface of this element, the metal mask is formed leaving the stripe in the (110) direction, and the Si ion with high energy is implanted to form the current constriction region 10. The P-type GaAs contact layer 9b is grown by epitaxy, when the MQW structure of the active layer 6 gives way to become the uniform mixed crystal, and the portion of low refraction index is formed in the oscillation region. Then, the P-side electrode layer 13 and the N-side electrode layer 12 are formed. |
| 公开日期 | 1989-10-23 |
| 申请日期 | 1985-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76822]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,KOBAYASHI KEISUKE,NAKAJIMA HISAO,et al. -. JP1989049030B2. 1989-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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