Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | NAKA HIROSHI; AIKI KUNIO; KATO YOSHIAKI |
| 发表日期 | 1986-09-27 |
| 专利号 | JP1986218191A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To keep the single lateral mode oscillation constantly and to stabilize a far field pattern by eliminating a random sway by forming a diffraction gratings on a boundary of a mesa part. CONSTITUTION:When a multilayer growth layer 8 comprising an active layer 5 is etched, a mask 9 having diffraction gratings 10 on both sides is used for etching. On both sides of a mesa part 11, that is both sides of a light waveguide path 1, diffraction gratings 12 of a desired pitch are formed and the crystal planes of both sides of the mesa part 11 are made the (111) crystal planes on which the melt back causing In to appear hardly occur. Accordingly though a buried layer 14 is formed on both sides of the mesa part 11 by a liquid-phase epitaxial method, the diffraction gratings 12 are not damaged and the single wavelength light emission can be maintained in spite of a high-speed modulation. |
| 公开日期 | 1986-09-27 |
| 申请日期 | 1985-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76825]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKA HIROSHI,AIKI KUNIO,KATO YOSHIAKI. Semiconductor laser element and manufacture thereof. JP1986218191A. 1986-09-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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