Semiconductor device
文献类型：专利
| 作者 | KONO TOSHIHIRO; OKUNO YAE; ONO YUICHI |
| 发表日期 | 1992-10-20 |
| 专利号 | JP1992296075A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To provide a semiconductor device manufactured through a hetero epitaxy method and provided with a growth layer of high quality by a method wherein the growth layer is lessened in through dislocation caused by misfit dislocations induced at an interface between a substrate and the growth layer. CONSTITUTION:When semiconductor layers 21, 22, 4, 6, and 8 different in lattice contact are laminated on a semiconductor substrate 1, a semiconductor layers of high quality can be obtained by providing one or more of single-layered distorted films 3, 5, and 5 smaller than a critical value in thickness or one or more of distorted layers larger than a critical value in thickness to the semiconductor layers concerned. Most of through location disappears in the single-layered distorted layers smaller or larger than a critical value in thickness, and as new misfit dislocation is hardly induced in the distorted layers smaller than a critical value in thickness, semiconductor layers of high quality can be obtained. |
| 公开日期 | 1992-10-20 |
| 申请日期 | 1991-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76830]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KONO TOSHIHIRO,OKUNO YAE,ONO YUICHI. Semiconductor device. JP1992296075A. 1992-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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