Manufacture of semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; KAMIJO TAKESHI; FUKUNAGA TOSHIAKI |
| 发表日期 | 1988-12-19 |
| 专利号 | JP1988310191A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To eliminate the formation of an oxide layer on a regrown boundary and to improve its characteristics and reliability by inhibiting to introduce a regrown boundary to a section which becomes a current path and presenting the regrown boundary only on a section in which a current does not flow. CONSTITUTION:A first clad layer 3, an active layer 4, a second clad layer 5, a third clad layer 6 and a cap layer 7 are sequentially grown on a substrate 1, the layers 7, 6 are removed by etching except a stripe section, and a current block layer 9 and a cap layer 10 are regrown on the removed section. Since the section which becomes the current path is not removed by etching and regrown but the section which becomes the layer 9 is formed by regrowing, the regrown boundary is not introduced to the section which becomes the current path, but presented only in the section in which no current blows. Thus, an oxide layer is not formed on the regrown boundary, and an element having excellent reliability and characteristics can be obtained. |
| 公开日期 | 1988-12-19 |
| 申请日期 | 1987-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76840]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,KAMIJO TAKESHI,FUKUNAGA TOSHIAKI. Manufacture of semiconductor laser. JP1988310191A. 1988-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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