Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | SASAKI KAZUAKI; WATANABE MASANORI; MATSUMOTO AKIHIRO; YAMAMOTO OSAMU; YAMAMOTO SABURO |
| 发表日期 | 1992-09-02 |
| 专利号 | JP1992245491A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To inhibit a direct current injection at the laser beam emitting edge face of a semiconductor laser element and to lessen a heat generation by a method wherein electrodes are respectively formed on the surface and the rear of the element excepting the vicinity of the emitting edge face. CONSTITUTION:A current constricting layer 12, a clad layer 13, an active layer 14, a clad layer 15 and a cap layer 16 are laminated in order on one main surface of a substrate 11 and a groove, which reaches the substrate 11 and has a V-shaped section, is formed in the layer 12. Electrodes 52 and 51 are respectively formed on the rear of the substrate 11 and the layer 16. Regions to extend to a distance l1=20mum from the edge faces of window layers 31 and 32 on the surface of the layer 16 are used as electrode non-formation regions and the electrode 51 is formed on the whole surface of the remaining surface of the layer 16. Thereby, it becomes possible to manufacture the electrodes of a high-output semiconductor laser element by a simple process. |
| 公开日期 | 1992-09-02 |
| 申请日期 | 1991-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76843]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SASAKI KAZUAKI,WATANABE MASANORI,MATSUMOTO AKIHIRO,et al. Semiconductor laser element and manufacture thereof. JP1992245491A. 1992-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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