Semiconductor laser
文献类型：专利
| 作者 | HOTTA HITOSHI |
| 发表日期 | 1992-03-04 |
| 专利号 | JP1992068586A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To get a lateral mode control AlGaInP semiconductor laser with low astigmatism by forming A InP layers doped with Zn, which absorb little laser beams generated in an active layer and is of high resistance, on both sides of a double heterostructure mesa stripe part so as to bury the mesa stripe part. CONSTITUTION:On an n-type GaAs substrate are formed an n-type (Al0.6Ga0.4)0.5 In0.5P clad layer 2, a Ga0.5In0.5P active layer 3, a p-type (Al0.6Ga0.4)0.5In0.5P clad layer 4, a p-type Ga0.5In0.5P layer 5, a p-type GaAs cap layer 6, and a stripe-shaped SiO2 mask 9. Next, it is etched into a mesa shape, using this SiO2 mask 9, and then the SiO2 mask 9 is removed, and an AlInP layer 8 doped with Zn is formed on the whole face. Furthermore, the top of the mesa part of the AlInP layer 8 doped with Zn is etched, and then a p-type GaAs contact layer 7 is made. Then, an electrode is made and cleft to get a semiconductor laser. |
| 公开日期 | 1992-03-04 |
| 申请日期 | 1990-07-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | HOTTA HITOSHI. Semiconductor laser. JP1992068586A. 1992-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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