Semiconductor laser device
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; YAMASHITA SHIGEO; YAMANAKA AKEMI; TANAKA TOSHIAKI; KAYANE NAOKI |
| 发表日期 | 1988-04-09 |
| 专利号 | JP1988079390A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To generate light with excellent characteristics, by making the length of the optical non-absorption region of an end surface as long as several tens of mum, and forming the shape of the end surface in an arc shape so that its center is located at a point where a laser beam is emitted from an optical waveguide to the non-absorption region. CONSTITUTION:In the structure of an optical waveguide region 1, a part of a P-type clad layer having a double heterostructure is substituted into an N- GaAs layer by a selective embedded growing method. In an N-type clad layer 5, another double heterostructure 6 is provided with a sufficient distance being provided from an active layer 7. The height of the double heterostructure is made to align with the height of the active layer in a transparent end surface region 2 by a step part, which is provided beforehand. In order that the region is transparent to laser light, the double heterostructure in the N-type clad layer is formed by a semiconductor, whose forbidden band width is broader than the active layer. The end surface of the laser is made to be an arc shaped surface 3. Thus, the light, which is spread by diffraction once, can be returned to the optical waveguide again, and loss can be prevented. |
| 公开日期 | 1988-04-09 |
| 申请日期 | 1986-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76855]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,YAMASHITA SHIGEO,YAMANAKA AKEMI,et al. Semiconductor laser device. JP1988079390A. 1988-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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