Semiconductor laser device
文献类型：专利
| 作者 | NISHI SEIJI; FURUKAWA RIYOUZOU |
| 发表日期 | 1982-10-30 |
| 专利号 | JP1982176784A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device wherein laser oscillation is performed up to high optical output power in a fundamental lateral mode, by providing first and second current limiting layers in a P region and an N region, and squeezing the flowing current between said current limiting layer. CONSTITUTION:Current limiting layers are alternately provided on both sides of P-N junction, and a large contacting area is provided between a P electrode and a P type cap layer. That is, a P type part 9 is formed in an N type substrate 10, and an N type clad layer 11, an active layer 12, a P type clad layer 13, an N type cap layer 14, and a P type cap layer 15 are formed on the substrate 10. Then a P type electrode 16 and an N type electrode 17 are formed. The spread of the current is limited by the N type cap layer 14 and the P type part 9. By reducing the distance between them, the spread of the current can be reduced without reducing the contact area of the P type cap layer 15 and the P electrode 16. |
| 公开日期 | 1982-10-30 |
| 申请日期 | 1981-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76862]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | NISHI SEIJI,FURUKAWA RIYOUZOU. Semiconductor laser device. JP1982176784A. 1982-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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