Semiconductor laser device
文献类型：专利
| 作者 | KAWAI YOSHIO; OSHIBA SAEKO; MATOBA AKIHIRO; KOBAYASHI MASAO |
| 发表日期 | 1988-11-10 |
| 专利号 | JP1988273381A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To oscillate a first active layer of a semiconductor laser in a lateral basic mode and to obtain an output of a lateral basic mode from a second active layer by resonating an optical wave only in the first layer, and merely conducting optical amplification due to an induction discharge in the second layer. CONSTITUTION:An epitaxial layer 46 on a substrate 44 is formed of upper and lower buried layers 38, 50, an intermediate current blocking layer 48, and active layers 34, 36, and the layer 48 is formed between the active layers 34 and 36. Electrodes 40, 42 are formed in the shapes and disposed at positions to inject currents to the layers 34, 36, and an electrode 52 is attached to the substrate 44. An optical wave discharged by the current injection is reciprocated in the layer 34 to resonate the optical wave. The wave is partly guided to the layer 36, inductively discharged in the layer 36, and the optical wave coincident in the phase and the wavelength to those of the optical wave reciprocated and guided in the layer 34 is discharged. An optical amplification due to the inductive discharge is merely conducted in the layer 36, and the optical amplification is increased together with the injection current amount. Accordingly, when the layer 34 is oscillated in a lateral basic mode, the optical wave of high output is obtained in the basic mode from the layer 36. |
| 公开日期 | 1988-11-10 |
| 申请日期 | 1987-05-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76864]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KAWAI YOSHIO,OSHIBA SAEKO,MATOBA AKIHIRO,et al. Semiconductor laser device. JP1988273381A. 1988-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。