Manufacture of optical integrated circuit
文献类型：专利
| 作者 | SAKANO SHINJI; NAKAMURA HITOSHI; MOROSAWA KENICHI; KAYANE NAOKI |
| 发表日期 | 1989-03-10 |
| 专利号 | JP1989064386A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical integrated circuit |
| 英文摘要 | PURPOSE:To obtain a flat face without a stepped part on the surface by a method wherein a first light waveguide in a first light waveguide region is left and both sides of a second light waveguide region are left so that this region can be made recessed. CONSTITUTION:An InGaAs P layer 3-1 and a p-type InP layer 3-2 are crystal-grown on an n-type InP substrate 1; after that, these layers are processed in such a way that a protruding shape 3 is left in a first light waveguide region and that protruding shapes 5 of a multilayer film for laser use are left on both sides of a second light waveguide region 2. Then, a multilayer growth operation of a second crystal layer 4 for photodetector use is executed. An InGaAsP layer is not grown on the protruding parts on both sides in a laser part and a region for a photodetector use by means of liquid growth; inversely, the layer is grown very rapidly in a recessed part. If a crystal growth operation is executed in such a way that an upper face of a p-type InP layer as a second layer by a second crystal growth operation after the operation becomes higher than the protruding shape, a height of the protruding part becomes nearly the same as that of the recessed region and both are flattened. In this state, the surface is flat; a depth from the laser part to the InGaAsP layer is equal to that from a photodetector part to the InGaAsP layer. |
| 公开日期 | 1989-03-10 |
| 申请日期 | 1987-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76869]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SAKANO SHINJI,NAKAMURA HITOSHI,MOROSAWA KENICHI,et al. Manufacture of optical integrated circuit. JP1989064386A. 1989-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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