Semiconductor laser and its manufacture
文献类型：专利
| 作者 | HATTORI AKIRA; SONODA TAKUJI |
| 发表日期 | 1990-09-21 |
| 专利号 | JP1990239679A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To increase the COD level and laser beam output by forming a current noninjection region in the vicinity of resonator end faces. CONSTITUTION:A striped groove 9 is formed in a region excluding the vicinity of resonator end faces of a GaAs current blocking layer. And, inside this striped groove 9 a second AlGaAs upper clad layer 20 of a second conductivity type and an AlyGa1-yAs (y<0.15) cap layer 21 of the second conductivity type are formed. In addition, a GaAs contact layer 8 being good in ohmic contact is formed all over the surface. By this process, a current noninjection region 23 is formed in the vicinity of the resonator end faces. And, this makes it possible to increase the COD(Catastrophic Optical Damage) level, and a higher laser beam output can be obtained. |
| 公开日期 | 1990-09-21 |
| 申请日期 | 1989-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76872]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HATTORI AKIRA,SONODA TAKUJI. Semiconductor laser and its manufacture. JP1990239679A. 1990-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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