Manufacture of buried semiconductor laser
文献类型：专利
| 作者 | KATOU YOSHITAKE |
| 发表日期 | 1988-09-21 |
| 专利号 | JP1988226989A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried semiconductor laser |
| 英文摘要 | PURPOSE:To enable the manufacturing of a semiconductor laser capable of high temperature operation and high-speed modulating operation with a low threshold current, by forming grooves on both sides of a region which serves as an active region in an active layer of lamination structure in a vapor growth device by a gas etching method and successively performing burial growth of a high resistance semiconductor into the grooves. CONSTITUTION:Lamination structure is formed so that an active layer is interposed between semiconductors which have a refractive index smaller than that of the active layer and a forbidden band width larger than that of the active layer. Next, grooves are formed on both sides of a region which serves as an active region 21 in the active layer of said lamination structure in a vapor growth device by a gas etching method, and successively burial growth of high resistance semiconductors 24 is performed into said grooves in the same vapor growth device. For example, a SiO2 film is formed on a surface of a DH crystal which is formed by a liquid growth method, and next a double striped opening part is formed in the SiO2 film. Thereafter, the wafer is put into a growth furnace, and the SiO2 film is used as a mask to form double grooves for burial by the gas etching method, and successively the high resistance semiconductors 24 made of Fe-doped InP are buried into the groove parts. |
| 公开日期 | 1988-09-21 |
| 申请日期 | 1987-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76876]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KATOU YOSHITAKE. Manufacture of buried semiconductor laser. JP1988226989A. 1988-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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