Buried semiconductor laser
文献类型：专利
| 作者 | SHINOHARA YASUO |
| 发表日期 | 1987-10-08 |
| 专利号 | JP1987230078A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a leakage current due to cutting of an N-type layer at the shoulder out of a groove by raising the height of the surface of a stripe interposed by two parallel grooves before buried growing higher than the surface of a flat portion outside the two grooves. CONSTITUTION:Two parallel grooves 5 are formed by a photoresist method on a wafer on which an n-type buffer layer 2, an active layer 3 and a P-type clad layer 4 are sequentially grown on an n-type InP substrate The grooves 5 are protruded through the layer 3 to arrive at the layer 2 to form a stripe 6 interposed between the two grooves 5. At this time, the stripe 6 is protected, and the layer 4 outside the grooves 5 is reduced in thickness by half by adding an etching step. Thus, the flat portion 9 outside the grooves is reduced in height from the strip 6 from the first so that the stripe 6 may not rise on the flat portion 9 outside the grooves after a buried P-type layer 7 is grown. Thus, a buried n-type layer 8 is hardly cut at the shoulder 10 outside the grooves when the layer 8 is grown. |
| 公开日期 | 1987-10-08 |
| 申请日期 | 1986-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76882]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SHINOHARA YASUO. Buried semiconductor laser. JP1987230078A. 1987-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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