Manufacture of semiconductor laser
文献类型：专利
| 作者 | MIURA SHUICHI; USHIJIMA ICHIRO |
| 发表日期 | 1992-08-31 |
| 专利号 | JP1992242988A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser stable even used in a hostile environment with high yield by so regulating the thickness of an upper clad layer as not to, while a mask exists on the clad layer, deteriorate characteristics of the laser of an ambient temperature due to later removal of the mask by a stress to be applied to an active layer. CONSTITUTION:A p-type InP lower clad layer 2 is grown on a p type InP substrate 1, an InGaAsP active layer 3 is grown thereon, and an n-type InP upper clad layer 4 is grown thereon. An SiO2 mask 20 is formed on the layer 4, and it is so selectively etched by using it as to reach the substrate Thereafter, an epitaxial growth for burying the side of a mesa shape is conducted, the mask 20 is removed, epitaxially grown to bury the upper surface, and electrodes are formed to form a semiconductor laser. Since an ACC deterioration rate is abruptly decreased upon increase of the thickness of the layer 4, it is desirable to set the thickness to about 0.45mum or more. |
| 公开日期 | 1992-08-31 |
| 申请日期 | 1991-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76884]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | MIURA SHUICHI,USHIJIMA ICHIRO. Manufacture of semiconductor laser. JP1992242988A. 1992-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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