Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | TANAKA HARUO; MUSHIGAMI MASAHITO; FUKADA HAYAMIZU; ISHIDA YUJI; NAKADA NAOTARO |
| 发表日期 | 1987-02-02 |
| 专利号 | JP1987024680A |
| 著作权人 | ROHM KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve electrical properties and optical properties by a method wherein a stripe groove which reaches the depth where the surface of the first upper clad layer is exposed and has a tapered surface is formed in the first grown layer along the wavelength of a laser resonator and the second grown layer, constituted by the second upper clad layer opposite in conductive type to the substrate and a cap layer, is laminated on the first grown layer. CONSTITUTION:A semiconductor laser 1 is constituted by an N-type GaAs substrate 10, an N-type AlGaAs lower clad layer 21, an AlxGa1-xAs activation layer 22, the first P-type AlGaAs upper clad layer 23, a P-type GaAs protection layer 24, an N-type GaAs current limiting layer 25, the second P-type AlGaAs upper clad layer 41, a P type GaAs cap layer 42, a P-type electrode 50 and an N-type electrode 5 A stripe groove 30' which reaches the depth where the surface of the first upper clad layer 23 is exposed and has a tapered surface 31 narrowing toward the substrate 10 is formed in the first grown layer 20 along the wavelength of a laser resonator. THe second grown layer 40 is composed of the second upper clad layer 41 and a cap layer 42. |
| 公开日期 | 1987-02-02 |
| 申请日期 | 1985-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76886]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM KK |
| 推荐引用方式 GB/T 7714 | TANAKA HARUO,MUSHIGAMI MASAHITO,FUKADA HAYAMIZU,et al. Semiconductor laser and manufacture thereof. JP1987024680A. 1987-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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