Semiconductor laser device
文献类型：专利
| 作者 | IMANAKA KOUICHI; MATOBA AKIHIRO; HORIKAWA HIDEAKI |
| 发表日期 | 1985-11-30 |
| 专利号 | JP1985241284A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the cost by facilitating the manufacture by a method wherein a substrate is provided with a streak of projection serving as an internal resonator in the direction orthogonal to the resonator, and an active layer is laminated on both sides of the streak of projection except that the electrode is not provided above this piece. CONSTITUTION:The streak of projection 2 serving as the internal resonator is formed in the direction orthogonal to the resonator in an InP substrate 1 with an orientation of 100 surface. The lower InP clad layer 3 of the same conductivity type as that of the substrate 1 is laminated on the substrate 1 at a lower level than the streak of projection 2. A GaInAsP active layer 4 is laminated on the lower clad layer 3 and thus provided on both sides of this piece 2 of the substrate The upper clad layer 5 having the reverse conductivity type to that of the substrate 1 and the lower clad layer 3 is laminated on the active layer 4 and the piece 2 of the substrate |
| 公开日期 | 1985-11-30 |
| 申请日期 | 1984-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76898]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI,MATOBA AKIHIRO,HORIKAWA HIDEAKI. Semiconductor laser device. JP1985241284A. 1985-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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