Manufacture of semiconductor device
文献类型：专利
| 作者 | KUSUKI TOSHIHIRO |
| 发表日期 | 1987-09-02 |
| 专利号 | JP1987199021A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To prevent the releasing of a lower shielding film during the later steps by subjecting a semiconductor substrate to mesa etching by use of a double layer mask consisting of two kinds of shielding films and subsequently removing the side exposed parts of the lower shielding film by using the upper shielding film as a mask. CONSTITUTION:After growing an N-buffer layer 2, an N-active layer 3, a P- cladding layer 4, a P-electrode layer 5 in order on an N-substrate 1, a double- layer mask composed of a resist film 12 and an SiO2 film 11 is formed on a region where an active layer is to be formed. Next, mesa etching of the exposed parts is performed by using the masks 11 and 12 laminated into a double layer. A part of the film 11 projecting in a flange-form is removed while keeping the film 12 as it is and the film 12 is then fused to be removed. By using the film 11 as a mask again, a P-layer 91 and an N-layer 92 as buried layers are grown in a recess. In such a growing method, as a flange-form part of the mask consisting of the film 11 has been removed and the film is hard to be detached by contact, a good buried layer can be formed by utilizing the film 1 |
| 公开日期 | 1987-09-02 |
| 申请日期 | 1986-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76900]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. Manufacture of semiconductor device. JP1987199021A. 1987-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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