Semiconductor laser device
文献类型：专利
| 作者 | OHBA, YASUO; NISHIKAWA, YUKIE; OKUDA, HAJIME; ISHIKAWA, MASAYUKI; SUGAWARA, HIDETO; SHIOZAWA, HIDEO; KOKUBUN, YOSHIHIRO |
| 发表日期 | 1991-07-23 |
| 专利号 | US5034957 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed. |
| 公开日期 | 1991-07-23 |
| 申请日期 | 1989-02-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76902]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | OHBA, YASUO,NISHIKAWA, YUKIE,OKUDA, HAJIME,et al. Semiconductor laser device. US5034957. 1991-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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