Semiconductor laser
文献类型：专利
| 作者 | OOSAWA JIYUN; IKEDA KENJI; SUZAKI WATARU |
| 发表日期 | 1983-05-02 |
| 专利号 | JP1983073176A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enlarge the part of high optical intensity in the lateral direction to take out high output, while an expanse of beam in the lateral direction is reduced at a semiconductor laser by a method wherein optical waveguide regions reducing thickness gently are provided at the sides of an active layer. CONSTITUTION:A first semiconductor layer 2 is formed on a semiconductor substrate 1, and an active layer 4 consisting of P type GaAs and a clad layer 5 consisting of P type AlxGa1-xAs are formed on the conductor layer 2 thereof. Optical waveguide layers 9 consisting of P type AlyGa1-yAs layers reducing thickness in proportion to recession from the active layer 4 thereof are grown together with second semiconductor layers 8 at the neighborhood of the active layer 4 thereof according to the epitaxial growth method. The optical waveguide layers 9 are made together with the conductor layers 8 as reversely biased P-N junctions, currents flowing in from the clad layer 5 are narrowed, the current is flowed mainly in the active layer 4, and light is emitted by radiative recombination. At this time, light is conducted also in the direction of the optical waveguide layers 9 on both sides to generate magnified light in the lateral direction, and high output is taken out, while an expanse of beam in the lateral direction is reduced. |
| 公开日期 | 1983-05-02 |
| 申请日期 | 1981-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76906]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | OOSAWA JIYUN,IKEDA KENJI,SUZAKI WATARU. Semiconductor laser. JP1983073176A. 1983-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。