Semiconductor laser
文献类型：专利
| 作者 | UMEO ITSUO |
| 发表日期 | 1983-07-07 |
| 专利号 | JP1983114478A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable to completely enclose a current in an active layer formed in a groove by forming the groove on a semi-insulating substrate and disposing the active layer in the groove. CONSTITUTION:A V-shaped groove is formed on a semi-insulating InP substrate 10. A p type InP clad layer 11, an InGaAsP active layer 12 and an n type InP clad layer are sequentially grown in the groove. Then, a p type conductive regin 14 is formed on the back side of the substrate 10. Thereafter, an n type electrode 15 is provided at the layer 13 side, and a p type electrode 16 is provided at the substrate 10 side. When thus constructed, a current can be completely confined in the layer 12 formed in the groove, thereby eliminating the reactive current. |
| 公开日期 | 1983-07-07 |
| 申请日期 | 1981-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UMEO ITSUO. Semiconductor laser. JP1983114478A. 1983-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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