Semiconductor laser
文献类型：专利
| 作者 | UENO SHINSUKE |
| 发表日期 | 1985-09-27 |
| 专利号 | JP1985189986A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the titled device capable of large photo output by laser oscillation with low threshold high efficiency and by basic transverse mode oscillation and easy of manufacture by a method wherein an active layer is sandwiched by the thin first and second clad and guide layers, and further the third guide layer is provided, then, the factor of photo confinement in the vertical direction of the active layer is reduced by increasing the photo penetration out of the active layer. CONSTITUTION:The active layer 14 is sandwiched by the thin first and second clad layers 13 and 15 and successively the first and second guide layers 12 and 16, further, the third guide layer 19 is provided in adjacency to the second guide layer 16. Therefore, light is drawn into the first, second and third guide layers 12, 16 and 19 of relatively larger refractive indices and then spread in the vertical direction around the active layer 14. Since the second and third guides 16 and 19 are adjacent to each other in the carrier injected region, the refractive index received by the light penetrated out to the carrier injected region increases. On the other hand, outside the carrier injected region, they are adjacent to an insulation layer 17 which is adjacent to the second guide layer 16 and has a refractive index smaller than that of the third guide layer 19, therefore, the refractive index received by the light penetrated out to this region reduces. As a result, the effective difference in positive refractive index is formed in the horizontal direction of the active layer, accordingly, stable transverse mode oscillation can be maintained. |
| 公开日期 | 1985-09-27 |
| 申请日期 | 1984-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76923]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | UENO SHINSUKE. Semiconductor laser. JP1985189986A. 1985-09-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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