Semiconductor laser
文献类型：专利
| 作者 | NAKAJIMA YASUO; KAWAMA YOSHITATSU; SAKAKIBARA YASUSHI |
| 发表日期 | 1991-01-14 |
| 专利号 | JP1991006876A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make it oscillate with a single wave length even during high output by partially widening the widths of stripe grooves in parallel so as to provide a region where a coupling constant is small. CONSTITUTION:On a p-InP substrate 1 are grown in order a p-InP buffer layer 2, an InGaAsP active layer 3, an n-InP barrier layer 4, and an n-InGaAsP light guide layer 5. Next, a resist 21 is applied so as to form a uniform pattern and then light etching is applied partially so as to form resist patterns wherein the widths are made small at the center of an element. Next, stripe grooves 11 which reach the barrier layer 4 are formed. At this time, by the difference of the size of the resist 21, grooves, whose widths are different in a uniform cycle A, are formed. An n-InP clad layer 7, and an n-InGaAsP contact layer are grown again, and a p electrode 9 and an n electrode 10 are formed. That is, if the widths l1 of the stripes grooves 11 in parallel are widened, the widths l2 of the light guide layer residuals at these parts become narrow, and the coupling constants at the regions of the center of the element become small, and the high intensity distribution can be made uniform even in high implantation, whereby hole burning can be suppressed. |
| 公开日期 | 1991-01-14 |
| 申请日期 | 1989-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76927]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAKAJIMA YASUO,KAWAMA YOSHITATSU,SAKAKIBARA YASUSHI. Semiconductor laser. JP1991006876A. 1991-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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