High output semiconductor laser element
文献类型：专利
| 作者 | YAMASHITA SHIGEO; NAKATSUKA SHINICHI; UCHIDA KENJI; KONO TOSHIHIRO; KAJIMURA TAKASHI |
| 发表日期 | 1992-01-20 |
| 专利号 | JP1992014887A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | High output semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element with a large output and stable operation at a short wavelength region by constituting a semiconductor activation layer region with three mixed crystal quantum well layers, two barrier layers separating them, and a light guide layer, and then by achieving a specific composition. CONSTITUTION:An n-GaAs buffer layer 2, an nAlXGa1-xAs clad layer 3, an AlYGa1-YGa1-YAs light guide layer, an AlUGa1-UAs well layer, a multiplex quantum well type activation layer 4 which consists of an AlWGa1-WAs barrier layer, a p-AlXGa1-XAs clad layer 5, and a p-GaAs interface layer 6 are formed on an n-type GaAs substrate This semiconductor laser has a wavelength of approximately 780nm, a threshold current value of approximately 35mA, and a horizontal basic mode. Also, it oscillates stably up to 70mW, does not show any deterioration at a lapse of 1000 hours or longer in continuous operation test of 50mW at 50 deg.C, and has an improved reliability. |
| 公开日期 | 1992-01-20 |
| 申请日期 | 1990-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76934]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,NAKATSUKA SHINICHI,UCHIDA KENJI,et al. High output semiconductor laser element. JP1992014887A. 1992-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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