Semiconductor laser
文献类型：专利
| 作者 | HIUGA SUSUMU |
| 发表日期 | 1988-08-26 |
| 专利号 | JP1988207189A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To change a longitudinal mode into a single mode, and to obtain excellent oscillation beams, dispersion loss thereof at the time of transmission is reduced, by bringing the refractive indices of current blocking layers among each element laser to the same extent as an optical guide layer. CONSTITUTION:At least two or more of element lasers constituted by holding an active layer 2, upper and lower clad layers l, 6 vertically holding the active layer 2, and an optical guide layer 3, which is formed adjacent to at least one side of the upper side or lower side of the active layer 2 and a refractive index of which is made smaller than the active layer 2 and larger than the upper and lower clad layers 1, 6, by current blocking layers 4, 5 from the transverse direction are arranged in parallel. The refractive indices of the current blocking layers 4, 5 among each element laser are brought to the same extent as the optical guide layer. Consequently, oscillation beams emitted from the active layers for each element laser couple through the current blocking layers among the element lasers, thus resulting in phase-locked oscillation. Accordingly, a semiconductor laser in which a longitudinal mode can be changed into a single mode is acquired. |
| 公开日期 | 1988-08-26 |
| 申请日期 | 1987-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76938]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIUGA SUSUMU. Semiconductor laser. JP1988207189A. 1988-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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