Manufacture of semiconductor device
文献类型：专利
| 作者 | MATSUI YASUSHI; ODANI JIYUN; FUJITA TOSHIHIRO; SERIZAWA AKIMOTO |
| 发表日期 | 1990-07-25 |
| 专利号 | JP1990188981A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To improve yield and controllability of horizontal mode in the thick ness direction of a semiconductor laser part by providing a rib-type light waveguide path layer on a semiconductor and an active light element with an active layer of smaller band gap than a rib-type light waveguide path layer on one part of upper surface of the rib-type light waveguide path layer. CONSTITUTION:A semiconductor laser 9 consists of a rib-type light waveguide path 2 constituted by an n-type InGaAsP (lambdag=1mum) on an n-type InP substrate (Band gap wavelength lambdag=0.92mum), an n-type InGaAsP active layer 3 (lambdag=3mum) which is formed partially on a light waveguide path 2, and a p-type In clad layer 4. Also, a light waveguide path part 10 is constituted, where the rib-type light waveguide path 2 in a semiconductor laser part 9 is extended. Also, the active layer 3 is embedded by a first p-type InP embedded layer 5, an n-type InP embedded layer 6, a second p-type InP embedded layer 7, and an embedded part h h consisting of a p-type InGaAsP contact layer 8 which is the laser part contact layer. Thus, it is not necessary to provide a separation layer between the active layer and the light waveguide path layer, thus enabling manufacture to be easy and improving controllability of horizontal mode in the thickness direction of the semiconductor laser part. |
| 公开日期 | 1990-07-25 |
| 申请日期 | 1989-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76940]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | MATSUI YASUSHI,ODANI JIYUN,FUJITA TOSHIHIRO,et al. Manufacture of semiconductor device. JP1990188981A. 1990-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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