Semiconductor laser element
文献类型：专利
| 作者 | TAKENAKA TAKUO; KANEIWA SHINJI; YANO MORICHIKA |
| 发表日期 | 1984-01-10 |
| 专利号 | JP1984003986A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To restrain the reactive current of the structure of internal stripe by a method wherein an N-type semiconductor layer is deposited, as an internal current block layer, on a P type semiconductor substrate, and then a current passage is opened by forming a stripe groove. CONSTITUTION:The Te doped N-GaAs current block layer 12 is grown on the Zn doped P-GaAs substrate 11 by liquid epitaxial growth, and the stripe groove 13 is worked by etching. The Zn doped P-Ga0.7Al0.3As first clad layer 14, an Si doped N-Ga0.95Al0.05As active layer 15, the Te doped N-Na0.7Al0.3As second clad layer 16 and a Te doped N-GaAs cap layer 17 are successively formed by an epitaxial method. A P-side electrode 18 and an N-side electrode 19 are formed by vapor deposition, and accordingly a laser element is obtained. Because of the interposition of the current block layer 12, the width of passage of current is regulated by both side parts of the channel as shown by arrow marks, thus the expansion in transverse directions is eliminated, and therefore the increase of reactive current is restrained. |
| 公开日期 | 1984-01-10 |
| 申请日期 | 1982-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76948]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | TAKENAKA TAKUO,KANEIWA SHINJI,YANO MORICHIKA. Semiconductor laser element. JP1984003986A. 1984-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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